GB40H65FB Trench gate field-stop IGBT

STMicroelectronics

Description

STGB40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic .
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

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Datasheet Specifications

Part number: GB40H65FB
Manufacturer: STMicroelectronics ↗
File Size: 824.12 KB
Datasheet: GB40H65FB-STMicroelectronics.pdf
Description: Trench gate field-stop IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 40 A
* Tight parameter distribution
* Safe paralleling

Applications

* Photovoltaic inverters

GB40H65FB Distributors

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GB40H65FB Trench gate field-stop IGBT STMicroelectronics

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