Datasheet Details
- Part number
- G15M65DF2
- Manufacturer
- STMicroelectronics ↗
- File Size
- 915.56 KB
- Datasheet
- G15M65DF2-STMicroelectronics.pdf
- Description
- Trench gate field-stop IGBT
G15M65DF2 Description
STGB15M65DF2 Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Int.
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
G15M65DF2 Features
* 6 μs of short-circuit withstand time
* VCE(sat) = 1.55 V (typ. ) @ IC = 15 A
* Tight parameter distribution
* Safer paralleling
* Positive VCE(sat) temperature coefficient
* Low thermal resistance
* Soft and very fast recovery antiparallel diode
* Maximum junction te
G15M65DF2 Applications
* Motor control
* UPS
* PFC
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