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BULT118 - NPN Transistor

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BULT118 Product details

Description

so rodThe device is manufactured using high voltage multi-epitaxial planar technology for high b Pswitching speeds and medium voltage capability.- O teIt uses a cellular emitter structure with planar ) leedge termination to enhance switching speeds t(s owhile maintaining the wide RBSOA.c bsThe device is designed for use in lighting u Oapplications and low cost switch-mode power d -supplies.SOT-32 1 2 3 Figure 1. Internal schematic diagram Obsolettee PPrrooduct(s)Table 1. Device summary l

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