BUL810 Datasheet (STMicroelectronics)

BUL810, NPN Transistor

ObThe BUL810 is manufactured using high voltage -multiepitaxial mesa technology for cost-effective )high performance.

It uses a hollow emitter t(sstructure to enhance switching speeds.

cThe BUL series is designed for use in lighting duapplications and low cost switch-mode power Obsolete Prosupplies.

BUL810 Features

* High voltage capability

* Low spread of dynamic parameters

* Low base-drive requirements )

* Very high switching speed t(s

* Fully characterized at 125 °C ducApplications ro

* Electronic transformer for halogen lamps P

* Electronic ballast for fluorescent lighting te