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BD682 - Complementary power Darlington transistors

Description

The devices are manufactured in planar base island technology with monolithic Darlington configuration.

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SOT-32 Figure 1.

Features

  • Good hFE linearity.
  • High fT frequency.
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode.

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Full PDF Text Transcription

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BD6xxx Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. . 1 2 3 SOT-32 Figure 1. Internal schematic diagram R1 typ.= 15 KΩ Table 1. Device summary Order codes BD677 BD677A BD678 BD678A BD679 BD679A BD680 BD680A BD681 BD682 Marking BD677 BD677A BD678 BD678A BD679 BD679A BD680 BD680A BD681 BD682 January 2008 Rev 5 Package SOT-32 R2 typ.= 100 Ω Packaging Tube 1/12 www.st.com 12 Contents Contents BD6xxx 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . .
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