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AM83135-030 - RF & MICROWAVE TRANSISTORS

AM83135-030 Description

AM83135-030 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS *..PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED.
The AM83135-030 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

AM83135-030 Applications

* . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 5.5 dB GAIN .310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM83135-030 BRANDING AM83135-30

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MICROWAVE TRANSISTORS STMicroelectronics
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