7ANM60N Datasheet (STMicroelectronics)

7ANM60N, N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

They are therefore suitable for the

7ANM60N Features

* Order code STB7ANM60N STD7ANM60N VDS RDS(on) max. ID 600 V 0.9 Ω 5A

* AEC-Q101 qualified

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Package D²PAK DPAK G(1) S(3) Applications

* Switching applications A