36NM60N Datasheet (STMicroelectronics)

36NM60N, Power MOSFET

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most

36NM60N Features

* TAB 3 1 D2 PAK Order code STB36NM60N VDS @ TJmax 650 V RDS(on) max. ID PTOT 0.105 Ω 29 A 210 W

* Designed for automotive applications and AEC-Q101 qualified

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Figure 1. I