36DN6F7 - Dual N-channel Power MOSFET

STMicroelectronics

The 36DN6F7 by STMicroelectronics is a Dual N-channel Power MOSFET. Below is the official datasheet preview.

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36DN6F7 Dual N-channel Power MOSFET by STMicroelectronics - Datasheet Preview — Official preview page of the **36DN6F7** Dual N-channel Power MOSFET datasheet (STMicroelectronics).

Datasheet Details

Part number	36DN6F7
Manufacturer	STMicroelectronics
File Size	754.53 KB
Description	Dual N-channel Power MOSFET
Datasheet	36DN6F7-STMicroelectronics.pdf
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36DN6F7 Product details

Description

This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

Order code STL36DN6F7 VDS 60 V RDS(on) max 27 mΩ ID 33 A.
Among the lowest RDS(on) on the market.
Excellent figure of merit (FoM).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness.

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Published: Nov 5, 2018 |