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300NH02L-6 - N-channel Power MOSFET

Description

This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance.

Table 1.

Features

  • TAB 1 H2PAK-6 7 Order code STH300NH02L-6 VDSS 24 V RDS(on) max. ID (1) < 1.2 mΩ 180 A 1. Current limited by package.
  • Designed for automotive.

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Part Number Description
300NH02L N-channel Power MOSFET

Full PDF Text Transcription

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STH300NH02L-6 Automotive-grade N-channel 24 V, 0.95 mΩ typ., 180 A 2 STripFET™ III Power MOSFET in a H PAK-6 package Datasheet − production data Features TAB 1 H2PAK-6 7 Order code STH300NH02L-6 VDSS 24 V RDS(on) max. ID (1) < 1.2 mΩ 180 A 1. Current limited by package. • Designed for automotive applications and AEC-Q101 qualified • Conduction losses reduced • Low profile, very low parasitic inductance, high current package Figure 1. Internal schematic diagram Applications • Switching applications Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. Order code STH300NH02L-6 Table 1.
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