2STR1160 Datasheet (STMicroelectronics) - Low voltage fast-switching NPN power transistor

2STR1160, Low voltage fast-switching NPN power transistor

The device in a NPN transistor manufactured using new “PB-HCD” (power bipolar E (2) high current density) technology.

The resulting transistor shows exceptional high gain NPNB1C3E2 performances coupled with very low saturation voltage.

The complementary PNP is the 2STR2160.

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2STR1160 Features

* 3 2 1 SOT-23

* Very low collector-emitter saturation voltage

* High current gain characteristic

* Fast switching speed

* Miniature SOT-23 plastic package for surface mounting circuits Applications C (3) B (1)

* Led

* Battery charger

* Motor