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M29F160BT M29F160BB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA
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SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS TIME: 55ns PROGRAMMING TIME – 8µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks
www.DataSheet4U.com s ACCESS
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PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin
TSOP48 (N) 12 x 20mm
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ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend
Figure 1.