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12NM60N - N-Channel MOSFET

Description

This series of devices implements second generation MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • www. DataSheet4U. com Type VDSS (@Tjmax) RDS(on) ID STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N 650V 650V 650V 650V 650V < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω 10A 10A 10A(1) 10A 10A 1. Limited only by maximum temperature allowed.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription

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STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET Features www.DataSheet4U.com Type VDSS (@Tjmax) RDS(on) ID STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N 650V 650V 650V 650V 650V < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω 10A 10A 10A(1) 10A 10A 1. Limited only by maximum temperature allowed ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
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