100N3LLH6 Datasheet (STMicroelectronics)

100N3LLH6, N-channel Power MOSFET

bsThis product utilizes the 6th generation of design Orules of ST’s proprietary STripFET™ technology, -with a new gate structure.The resulting Power )MOSFET exhibits the lowest RDS(on) in all t(spackages.

PowerFLAT™ ( 5x6 ) Figure 1.

Internal schematic diagram lete ProducTable 1.

Device summary so

100N3LLH6 Features

* STL100N3LLH6 N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6) STripFET™ VI DeepGATE™ Power MOSFET Preliminary data Type STL100N3LLH6 VDSS 30 V RDS(on) max 0.0035 Ω ID 25 A (1) 1. The value is rated according Rthj-pcb

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance