GD200HFL170C2S Datasheet - STARPOWER

GD200HFL170C2S IGBT

GD200HFL170C2S Features

* Low VCE(sat) SPT+ IGBT technology

* 10μs short circuit capability

* VCE(sat) with positive temperature coefficient

* Maximum junction temperature 175oC

* Low inductance case

* Fast & soft reverse recovery anti-parallel FWD

* Isolated copper baseplate using DBC technolog

Datasheet Details

GD200HFL170C2S

STARPOWER

399.73 KB

Igbt.

GD200HFL170C2S Distributor

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