GD150HFU120C8SD Datasheet - STARPOWER

GD150HFU120C8SD IGBT

GD150HFU120C8SD Features

* Low VCE(sat) Trench IGBT technology

* 10μs short circuit capability

* VCE(sat) with positive temperature coefficient

* Maximum junction temperature 150oC

* Low inductance case

* Fast & soft reverse recovery anti-parallel FWD

* Isolated copper baseplate using DBC technol

Datasheet Details

GD150HFU120C8SD

STARPOWER

420.65 KB

Igbt.

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