GD1000HFX170P2S
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as wind power.
Features
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Enlarged Diode for regenerative operation
- Isolated copper baseplate using DBC technology
- High power and thermal cycling capability
Typical Applications
- High Power Converter
- Wind Power
- Auxiliary Inverter
Equivalent Circuit Schematic
IGBT Module
IGBT
©2019 STARPOWER Semiconductor Ltd. 1/6/2019 1/10 Preliminary
IGBT Module
Absolute Maximum Ratings TC=25o C unless otherwise noted
IGBT
Symbol VCES VGES
ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage Collector Current @ TC=25o C
@ TC=100o C
Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175o C
Diode
Symbol VRRM IF IFM
Description
Repetitive...
