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ST18N10D
N Channel Enhancement Mode MOSFET
18.0A
DESCRIPTION
ST18N10D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST18N10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK) TO-252
FEATURE
! 100V/12.0A, RDS(ON) = 90mΩ(Typ.) @VGS = 10V
! 100V/8.0A, RDS(ON) = 100mΩ @VGS = 4.
ST18N10D Datasheet
