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STD4N62K3 Power MOSFET

STD4N62K3 Description

www.DataSheet4U.com STD4N62K3 STU4N62K3 N-channel 620 V, 1.8 Ω, 3.8 A SuperMESH3™ Power MOSFET DPAK, IPAK Preliminary data .
These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ techn.

STD4N62K3 Features

* Type STD4N62K3 STU4N62K3
* VDSS 620 V RDS(on) max < 1.95 Ω ID 3.8 A Pw 70 W 3 1 2 1 3 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected DP

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