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P8NA50 - STP8NA50

Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

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Datasheet Details

Part number P8NA50
Manufacturer STMicroelectronics
File Size 234.20 KB
Description STP8NA50
Datasheet download datasheet P8NA50 Datasheet
Additional preview pages of the P8NA50 datasheet.

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STP8NA50 STP8NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP8NA50 STP8NA50FI www.DataSheet4U.com s s s s s s s V DSS 500 V 500 V R DS( on) < 0.85 Ω < 0.85 Ω ID 8A 4.5 A TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
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