Datasheet4U Logo Datasheet4U.com

P4NA80FI - STP4NA80FI

Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

📥 Download Datasheet

📁 Similar Datasheet

  • P4NA60FI - STP4NA60FI (STMicroelectronics)
  • P4N05L - RFP4N05L (Intersil Corporation)
  • P4N150 - N-CHANNEL MOSFET (STMicroelectronics)
  • P4N20 - N-channel Power MOSFET (STMicroelectronics)
  • P4N60 - SSP4N60 (Fairchild Semiconductor)
  • P4N80E - MTP4N80E (Motorola)
  • P4NB50 - N-CHANNEL MOSFET (STMicroelectronics)
  • P4NB80 - STP4NB80 (STMicroelectronics)
  • P4NB80 - Power MOSFET (VBsemi)
  • P4NB80FP - STP4NB80FP (STMicroelectronics)
Other Datasheets by ST Microelectronics

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com www.DataSheet4U.com STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA80 STP4NA80FI s s s s s s s V DSS 800 V 800 V R DS( on) < 3Ω < 3Ω ID 4A 2.5 A TYPICAL RDS(on) = 2.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
Published: |