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M59BW102 - 1 Mbit 64Kb x16 / Burst Low Voltage Flash Memory

M59BW102 Description

M59BW102 1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory PRELIMINARY DATA s 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS SEQUE.
The M59BW102 is a non-volatile memory that may be erased electrically at the chip level and programmed in-system on a Word-by-Word basis using only a.

M59BW102 Features

* an interleaved access modality which allows extremely fast access time. The device is offered in TSOP40 (10 x 14mm) package. Figure 1. Logic Diagram VCC 16 A0-A15 W E G ALE M59BW102 16 DQ0-DQ15 VSS AI02763B March 2000 This is preliminary information on a new product now in development or under

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Mbit 64Kb x16 Burst Low Voltage Flash Memory ST Microelectronics
ST Microelectronics M59BW102-like datasheet