Datasheet4U.com

M58WR064HB - 1.8 V supply Flash memories

ST Microelectronics

📥 Download Datasheet

M58WR064HB Datasheet Preview — Preview of M58WR064HB PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number: M58WR064HB
Manufacturer: STMicroelectronics ↗
File Size: 1.06 MB
Datasheet: M58WR064HB_STMicroelectronics.pdf
Description: 1.8 V supply Flash memories

M58WR064HB Product details

Description

.. .. .. ..

Features

Supply voltage.
VDD = 1.7 V to 2 V for program, erase and read.
VDDQ = 1.7 V to 2.24 V for I/O buffers.
VPP = 12 V for fast program (optional) Synchronous/asynchronous read.
Synchronous burst read mode: 66 MHz.
Asynchronous/synchronous page read mode.
Random access: 60 ns, 70 ns Synchronous burst read suspend Programming time.
8 µs by word typical for fast factory program.
Double/quadruple word program option.

📁 Related Datasheet

M58WR064B - FLASH MEMORY (STMicroelectronics)
M58WR064KB - 64Mb Multi Bank Burst Flash memories (Micron)
M58WR064KT - 64Mb Multi Bank Burst Flash memories (Micron)
M58WR064T - FLASH MEMORY (STMicroelectronics)
M58WR032KB - 32Mb Multi Bank Burst Flash memories (Micron)
M58WR032KT - 32Mb Multi Bank Burst Flash memories (Micron)
M581 - DING-DONG DOOR BELL (ETC)
M5817 - Surface Mount Schottky Diodes (Weitron Technology)

📌 All Tags

1.8 supply Flash memories ST Microelectronics

ST Microelectronics M58WR064HB-like datasheet

M58WR064HT - 1.8 V supply Flash memories
M58WR064EB - 64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory
M58WR064ET - 64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory
M58WR064KL - Flash memories
M58WR064KU - Flash memories
M58WR016KL - Flash memories