M58MR016D - 16 Mbit 1Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory

Product Overview

ST Microelectronics

Datasheet Details

Part number	M58MR016D
Manufacturer	STMicroelectronics
File Size	389.53 KB
Description	16 Mbit 1Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
Datasheet	M58MR016D Datasheet
Additional preview pages of the M58MR016D datasheet.

Product details

Description

The M58MR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.7V to 2.0V V DD supply for the circuitry.

Features

asymmetrically blocked architecture. M58MR016 has an array of 71 blocks and is divided into two banks A and B, providing Dual Bank operations. While programming or erasing in Bank A, read operations are possible into Bank B or vice versa. Only one bank at the time is allowed to be in program or erase mode. It is possible to perform burst reads that cross bank boundaries. The memory features an erase suspend allowing reading or programming in another block. Once suspended the erase can be resumed.

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Other Datasheets by ST Microelectronics

M58MR016C - 16 Mbit 1Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
M58MR032C - 32 Mbit 2Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
M58MR032D - 32 Mbit 2Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
M58MR064C - 64 Mbit 4Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
M58MR064D - 64 Mbit 4Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
M58BF008 - 8 Mbit 256Kb x32 / Burst Flash Memory

Published: Apr 26, 2005 |