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S3M0025120B 1200V SIC POWER MOSFET

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Description

S3M0025120B Technical Data Data Sheet N2840, REV.- S3M0025120B 1200V SIC POWER MOSFET VDS = 1200 V IDS@ 25℃ = 73 A RDS(on) = 25 mΩ Circuit Diagram.
S3M0025120B is a single SiC Power MOSFET packaged in T2PAK case.

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Datasheet Specifications

Part number
S3M0025120B
Manufacturer
SMC Diode
File Size
1.77 MB
Datasheet
S3M0025120B-SMCDiode.pdf
Description
1200V SIC POWER MOSFET

Features

* Positive temperature characteristics, easy to parallel.
* Low on-resistance typ. RDS(on) = 25 mΩ.
* Fast switching speed and low switching losses.
* Very fast and robust intrinsic body diode.
* Process of non-bright tin electroplatin. “-A” is an AEC-Q101 qua

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