SNM101R5TLAQ Datasheet (SIT) - Single N-channel Power MOSFET

SNM101R5TLAQ, Single N-channel Power MOSFET

The SNM101R5TLAQ is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit.

Standard Product S

SNM101R5TLAQ Features

* Drain-Source Withstand Voltage: 100V

* Max. RDS(on) : 1.5mΩ @ VGS=10V

* Automotive applications

* AEC-Q101 Qualified

* Excellent ON resistance

* Package TOLL-8L

* 100% Rg and Avalanche tested

* MSL1 PRODUCT APPEARANCE ： TOLL-8L DESC