SNM068R2DRAQ Datasheet (SIT) - Single N-channel Power MOSFET

SNM068R2DRAQ, Single N-channel Power MOSFET

The SNM068R2DRAQ is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit.

Standard Product S

SNM068R2DRAQ Features

* Drain-Source Withstand Voltage: 60V

* Max. RDS(on) : 8.2 mΩ @ VGS=10V 13.5 mΩ @ VGS=4.5V

* Automotive applications

* AEC-Q101 Qualified

* Excellent ON resistance

* General footprint package PDFN3333-8L

* 100% Rg and Avalanche tested