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SVF4N60M - 600V N-CHANNEL MOSFET

Download the SVF4N60M datasheet PDF. This datasheet also covers the SVF4N60D variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • ∗ 4A, 600V, RDS(on)(typ)=2.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF4N60D-SILANMICROELECTRONICS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF4N60M
Manufacturer SILAN MICROELECTRONICS
File Size 493.31 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF4N60M Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SVF4N65CAD 650V N-CHANNEL MOSFET SL
SVF4N65CAF 650V N-CHANNEL MOSFET SL
SVF4N65CAK 650V N-CHANNEL MOSFET SL
SVF4N65CAM 650V N-CHANNEL MOSFET SL
SVF4N65CAMJ 650V N-CHANNEL MOSFET SL

Other Datasheets by SILAN MICROELECTRONICS

Part Number Description
SVF4N60MJ 600V N-CHANNEL MOSFET
SVF4N60CADTR 600V N-CHANNEL MOSFET
SVF4N60CAF 600V N-CHANNEL MOSFET
SVF4N60CAK 600V N-CHANNEL MOSFET
SVF4N60CAMJ 600V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVF4N60D/F/FG/T/K/M/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 4A, 600V, RDS(on)(typ)=2.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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