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S10H038S - N-Channel MOSFET

Download the S10H038S datasheet PDF. This datasheet also covers the S10H038R-SI variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This Power MOSFET is produced using Si-Tech’s advanced Split-Gate MOS Technology.

Features

  • 100V,160A,Rds(on)(typ)=3.8mΩ @Vgs=10V.
  • High Ruggedness.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • Split-Gate MOS Technology General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (S10H038R-SI-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number S10H038S
Manufacturer SI-TECH
File Size 448.02 KB
Description N-Channel MOSFET
Datasheet download datasheet S10H038S Datasheet

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Other Datasheets by SI-TECH

Part Number Description
S10H038R N-Channel MOSFET
S10H050R N-Channel MOSFET
S10H050S N-Channel MOSFET
S10H06R N-Channel MOSFET
S10H06RN N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SI-TECH SEMICONDUCTOR CO.,LTD S10H038R/S N-Channel MOSFET Features █ 100V,160A,Rds(on)(typ)=3.8mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability █ Split-Gate MOS Technology General Description This Power MOSFET is produced using Si-Tech’s advanced Split-Gate MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
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