High Breakdown Voltage; High Speed Switching (< 10 nsec).
Low Capacitance; Low Leakage.
Hermetic Ceramic package.
TX, TXV, S level screening available
Maximum Ratings:
All ratings are at 25 oC unless otherwise noted
Characteristics
Symbol
Condition
Reverse Breakdown Voltage VBR Per diode, Pulsed @ IR = 5 A
Continuous Forward Current
Pw=300 s +/- 50µs; duty < 2% I.