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MMBD6100 - Silicon Epitaxial Planar Switching Diode

Features

  • Small package.
  • Low forward voltage.
  • Fast reverse recovery time.
  • Small total capacitance 3 12 Marking Code: A4 TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Maximum Peak Forward Current Non-Repetitive Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Air Junction and Storage Temperature Range at t = 1 s at t = 1 µs Symbol VR IF IFM IFSM Ptot RθJA Tj, Tstg Value 70 2.

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Datasheet Details

Part number MMBD6100
Manufacturer SEMTECH
File Size 211.24 KB
Description Silicon Epitaxial Planar Switching Diode
Datasheet download datasheet MMBD6100 Datasheet
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MMBD6100 Silicon Epitaxial Planar Switching Diode Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 12 Marking Code: A4 TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Maximum Peak Forward Current Non-Repetitive Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Air Junction and Storage Temperature Range at t = 1 s at t = 1 µs Symbol VR IF IFM IFSM Ptot RθJA Tj, Tstg Value 70 200 300 1 2 300 417 - 55 to + 150 Unit V mA mA A mW °C/W OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 100 mA Reverse Current at VR = 50 V Reverse Breakdown Voltage at IR = 100 µA Total Capacitance at VR = 0 Reverse Recovery Time at IF =
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