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1N4531, 1N4532
Silicon Epitaxial Planar Switching Diode
Applications • High-speed switching
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-repetitive Peak Forward Current
Power Dissipation Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 10 mA Reverse Current at VR = 20 V at VR = 50 V at VR = 20 V, Tj = 150 OC at VR = 50 V, Tj = 150 OC Diode Capacitance at VR = 0 , f = 1 MHz
Reverse Recovery Time at IF = 10 mA, IR = 60 mA, RL = 100 Ω at IF = 10 mA, IR = 10 mA, RL = 100 Ω
Max. 0.45
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No.
XXX Max. 2.9
Min. 27.
1N4531 Datasheet
