RB501V-40 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

SEMTECH ELECTRONICS

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Datasheet Details

Part number	RB501V-40
Manufacturer	SEMTECH ELECTRONICS
File Size	238.72 KB
Description	SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Datasheet	RB501V-40_SEMTECHELECTRONICS.pdf

RB501V-40 Product details

Description

Cathode Anode 2 Applications Low current rectification 1 S7 Top View Marking Code: "S7" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature www.DataSheet.co.kr Symbol VRM VR IO IFSM Tj Ts Value 45 40 0.1 1 125 - 40 to + 125 Unit V V A A O C C Storage Temperature Range O Characteristics at Ta = 25 OC Parameter Forwa

Features

Small surface mounting type.
High reliability.

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Published: Apr 3, 2012 |