MBR30120CT - SCHOTTKY RECTIFIER

SANGDEST MICROELECTRONICS

Datasheet Details

Part number	MBR30120CT
Manufacturer	SANGDESTMicroelectronics
File Size	137.02 KB
Description	SCHOTTKY RECTIFIER
Datasheet	MBR30120CT-SANGDESTMICROELECTRONICS.pdf

175 ℃ TJ operation.
Center tap configuration.
Low forward voltage drop.
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
High frequency operation.
Guard ring for enhanced ruggedness and long term reliability.
This is a Pb.
Free Device.
All SMC parts are traceable to the wafer lot.
Additional testing can be offered upon request Mechanical Dimensio.

📁 MBR30120CT Similar Datasheet

MBR30120FCT - DUAL SCHOTTKY BARRIER RECTIFIER (PowerSilicon)
MBR30100 - Schottky Barrier (Micro Commercial Components)
MBR30100C - 30A SCHOTTKY BARRIER RECTIFIER (Unisonic Technologies)
MBR30100CFSH - SCHOTTKY BARRIER RECTIFIER (Zowie Technology)
MBR30100CT - SCHOTTKY BARRIER RECTIFIER (Pan Jit International)
MBR30100CT-1 - SCHOTTKY RECTIFIER (SMC Diode)
MBR30100CT-Y - Dual Common Cathode Schottky Rectifier (Taiwan Semiconductor)
MBR30100CTG - Schottky Barrier Rectifier (American First Semiconductor)

Other Datasheets by SANGDEST MICROELECTRONICS

Published: Sep 22, 2015 |