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RUH1H100R N-Channel Advanced Power MOSFET

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Description

RUH1H100R N-Channel Advanced Power MOSFET .
GDS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Vol.

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Datasheet Specifications

Part number
RUH1H100R
Manufacturer
Ruichips
File Size
364.02 KB
Datasheet
RUH1H100R-Ruichips.pdf
Description
N-Channel Advanced Power MOSFET

Features

* 100V/100A, RDS (ON) =5.2mΩ(Typ. )@VGS=10V
* Advanced HEFET® Technology
* Ultra Low On-Resistance
* Excellent QgxRDS(on) Product
* 100% avalanche tested
* 175°C Operating Temperature
* Lead Free and Green Devices Available (RoHS Compliant) Appl

Applications

* Motor Drives
* Uninterruptible Power Supplies

RUH1H100R Distributors

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