RU55111R - N-Channel Advanced Power MOSFET

Ruichips

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Datasheet Details

Part number	RU55111R
Manufacturer	Ruichips
File Size	283.47 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU55111R-Ruichips.pdf

RU55111R Product details

Description

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS

Features

55V/110A, RDS (ON) =5mΩ(tpy. )@VGS=10V RDS (ON) =7mΩ(tpy. )@VGS=4.5V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Apr 26, 2016 |