RU30P4C6 - P-Channel Advanced Power MOSFET

Ruichips

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Datasheet Details

Part number	RU30P4C6
Manufacturer	Ruichips
File Size	324.95 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU30P4C6-Ruichips.pdf

RU30P4C6 Product details

Description

S D D G D D SOT23-6 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to

Features

-30V/-4A, RDS (ON) =50mΩ(Typ. )@VGS=-10V RDS (ON) =75mΩ(Typ. )@VGS=-4.5V.
Low On-Resistance.
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Apr 26, 2016 |