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RU30J30M - Dual N-Channel Advanced Power MOSFET

RU30J30M Description

RU30J30M Dual N-Channel Advanced Power MOSFET .
G2S2 S2 S2 G1D1D1D1 PDFN5. 6 PIN1 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TST.

RU30J30M Features

* 30V/30A, RDS (ON) =7mΩ(Typ. )@VGS=10V RDS (ON) =9.5mΩ(Typ. )@VGS=4.5V
* Fast Switching Speed
* Low gate Charge
* 100% avalanche tested

RU30J30M Applications

* Switching Application Systems

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Datasheet Details

Part number
RU30J30M
Manufacturer
Ruichips
File Size
413.75 KB
Datasheet
RU30J30M-Ruichips.pdf
Description
Dual N-Channel Advanced Power MOSFET

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Dual N-Channel Advanced Power MOSFET Ruichips
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