RU30C8H - N-Channel Advanced Power MOSFET

Ruichips

RU30C8H Datasheet Preview — Preview of RU30C8H PDF

Datasheet Details

Part number	RU30C8H
Manufacturer	Ruichips
File Size	310.22 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU30C8H-Ruichips.pdf

RU30C8H Product details

Description

D2 D2 D1 D1 G2 S2 G1 pin1 S1 SOP-8 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=±10V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Res

Features

N-Channel 30V/8A, RDS (ON) =12mΩ(Typ. ) @ VGS=10V RDS (ON) =16mΩ(Typ. ) @ VGS=4.5V.
P-Channel -30V/-7A, RDS (ON) =18mΩ (Typ. ) @ VGS=-10V RDS (ON) =25mΩ (Typ. ) @ VGS=-4.5V.
Reliable and Rugged.
ESD Protected.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Apr 26, 2016 |