RU207C - N-Channel Advanced Power MOSFET

Ruichips

The RU207C by Ruichips is a N-Channel Advanced Power MOSFET. Below is the official datasheet preview.

📥 Download Datasheet

RU207C N-Channel Advanced Power MOSFET by Ruichips - Datasheet Preview — Official preview page of the **RU207C** N-Channel Advanced Power MOSFET datasheet (Ruichips).

Datasheet Details

Part number	RU207C
Manufacturer	Ruichips
File Size	479.19 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU207C-Ruichips.pdf
Additional preview pages of the RU207C datasheet.

RU207C Product details

Description

Applications Power Management Absolute Maximum Ratings Symbol times Parameter g Common Ratings (TA=25°C Unless Otherwise Noted) n VDSS Drain-Source Voltage he VGSS Gate-Source Voltage gs TJ Maximum Junction Temperature n TSTG Storage Temperature Range To IS Diode Continuous Forward Current Mounted on Large Heat Sink For IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=4.5V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Cas

Features

20V/6A, RDS (ON) =10mΩ(Typ. )@VGS=4.5V RDS (ON) =15mΩ(Typ. )@VGS=2.5V.
Low RDS (ON).
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

📁 RU207C Similar Datasheet

RU20A - FAST RECOVERY RECTIFIER DIODE (EIC)
RU2 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU2441B04 - RF Module (Samsung)
RU2441B04GCA - RF Module (Samsung)
RU2441B04UAA - RF Module (Samsung)
RU2441H04 - RF Module (Samsung)
RU2441H04CAA - RF Module (Samsung)
RU2441H04CDA - RF Module (Samsung)

Other Datasheets by Ruichips

RU20120L - N-Channel Advanced Power MOSFET
RU20130L - N-Channel Advanced Power MOSFET
RU2013H - N-Channel Advanced Power MOSFET
RU2020H - N-Channel Advanced Power MOSFET
RU2021H - N-Channel Advanced Power MOSFET
RU205B - N-Channel Advanced Power MOSFET

Published: Jan 21, 2025 |