RU1Z200Q - N-Channel Advanced Power MOSFET

Ruichips

RU1Z200Q Description

RU1Z200Q N-Channel Advanced Power MOSFET .
G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Volta.

RU1Z200Q Features

* 150V/200A, RDS (ON) =5.5mΩ(Typ. )@VGS=10V
* Ultra Low On-Resistance
* Exceptional dv/dt capability
* Fast Switching and Fully Avalanche Rated
* 100% avalanche tested
* 175°C Operating Temperature
* Lead Free and Green Devices Available (RoHS C

RU1Z200Q Applications

* High Efficiency Synchronous Rectification in SMPS
* High Speed Power Switching

📥 Download Datasheet

RU1Z200Q Datasheet Preview — Preview of RU1Z200Q PDF

Datasheet Details

Part number: RU1Z200Q
Manufacturer: Ruichips
File Size: 398.68 KB
Datasheet: RU1Z200Q-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

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N-Channel Advanced Power MOSFET Ruichips

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