RU190N10S - N-Channel Advanced Power MOSFET

Ruichips

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Datasheet Details

Part number: RU190N10S
Manufacturer: Ruichips
File Size: 280.36 KB
Datasheet: RU190N10S-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

RU190N10S Product details

Description

TO-263 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current(VGS=10V) TC=25°C TC=25°C TC=100°C PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case TC=25°C TC=100

Features

100V/190A RDS (ON)=6.5mΩ(Typ. ) @ VGS=10V.
Avalanche Rated.
Reliable and Rugged.
Lead Free and Green Devices Available.

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Published: Apr 10, 2017 |