Datasheet4U.com

AS098Q1200W - High Power Stacked Infrared Laser Diode Array

Roithner

📥 Download Datasheet

AS098Q1200W Datasheet Preview — Preview of AS098Q1200W PDF

datasheet Preview Page 2

Datasheet Details

Part number	AS098Q1200W
Manufacturer	Roithner
File Size	112.90 KB
Description	High Power Stacked Infrared Laser Diode Array
Datasheet	AS098Q1200W-Roithner.pdf

AS098Q1200W Product details

Features

Output Power: 1200 W qCW.
920-980 nm Emission Wavelength.
Spectral Width: ≤4 nm.
High Reliability, High Efficiency.
QCW stack can be designed according to the customer of non-standard products heat sink package.

📁 AS098Q1200W Similar Datasheet

AS004M1-08 - GaAs MMIC SPST FET Switch (Alpha Industries)
AS004M1-11 - GaAs MMIC SPST FET Switch (Alpha Industries)
AS004M2-08 - GaAs MMIC SPST FET Switch (Alpha Industries)
AS004M2-11 - GaAs MMIC SPST FET Switch (Alpha Industries)
AS004S2-11 - GaAs IC SPDT Switch (Alpha Industries)
AS006L1-00 - GaAs MMIC SPST FET (Alpha Industries)
AS006L1-01 - GaAs IC SPST Switch (Alpha Industries)
AS006L1-10 - GaAs IC SPST Switch (Alpha Industries)

Other Datasheets by Roithner

AS098Q300W - High Power Stacked Infrared Laser Diode Array
AS098Q600W - High Power Stacked Infrared Laser Diode Array
AS098C100W - High Power Stacked Infrared Laser Diode Array
AS098C60W - High Power Stacked Infrared Laser Diode Array
AS081C100W - High Power Stacked Infrared Laser Diode Array
AS081C200W - High Power Stacked Infrared Laser Diode Array

Published: Mar 12, 2015 |