1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lInner circuit
(C)
(A)
Data Sheet
(C) Cathode (A) Anode
lConstruction Silicon carbide epitaxial planer type Schottky diode
lAbsolute maximum ratings (Tj = 25°C) Parameter
Symbol
Value
Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current Junction temperature
VRM 650
VR 650
IF 10.
S6202-Rohm.pdf
