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RUE003N02 - 1.8V Drive Nch MOSFET

RUE003N02 Description

1.8V Drive Nch MOSFET RUE003N02 *Structure Silicon N-channel MOSFET *Dimensions (Unit : mm) EMT3 *.

RUE003N02 Features

* 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. (1)Source (2)Gate (3)Drain Abbreviated symbol : QT

RUE003N02 Applications

* Switching
* Packaging specifications Type Package Code Basic ordering unit (pieces) Taping TL 3000 RUE003N02
* Equivalent circuit Drain Gate ∗2 ∗1 ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Source
* Absolute maximum ratings (Ta=25C) Parameter Symbol Drain-source voltage VDSS Ga

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Datasheet Details

Part number
RUE003N02
Manufacturer
ROHM ↗
File Size
308.37 KB
Datasheet
RUE003N02-Rohm.pdf
Description
1.8V Drive Nch MOSFET

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1.8V Drive Nch MOSFET Rohm
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