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RTQ035N03 - 2.5V Drive Nch MOS FET

Features

  • 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (2.5V drive). 2.9 1.9 0.95 0.95 (6) (5) (4) 1.6 2.8 0~0.1 (3) 1/2 RTQ035N03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current VGS (th) Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transf.

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Datasheet Details

Part number RTQ035N03
Manufacturer ROHM
File Size 74.78 KB
Description 2.5V Drive Nch MOS FET
Datasheet download datasheet RTQ035N03 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TSMT6 1.0MAX 0.85 0.7 (1) (2) (3) 1pin mark 0.4 0.
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