RSD200N10 4V Drive Nch MOSFET

Rohm

RSD200N10 Description

4V Drive Nch MOSFET RSD200N10 *Structure Silicon N-channel MOSFET *.

RSD200N10 Features

* 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be  20V. 5) Drive circuits can be simple. 6) Parallel use is easy.

RSD200N10 Applications

* Switching
* Dimensions (Unit : mm) CPT3 (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Source)
* Packaging specifications Package Code Type Basic ordering unit (pieces) RSD200N10 Taping TL 2500
* Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Drain-source voltage VDSS 10

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Datasheet Details

Part number: RSD200N10
Manufacturer: ROHM ↗
File Size: 185.44 KB
Datasheet: RSD200N10-Rohm.pdf
Description: 4V Drive Nch MOSFET

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