Features
all mold type. (UMD6) 2)Low VF
0.9
0～0.1
0.35
UMD6.
Construction Silicon epitaxial planer
1.3±0.1
0.7 0.9±0.1
0.1Min.
Structure
ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory).
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05 φ1.5±0.1 0 0.3±0.1
www. DataSheet. co. kr
3.5±0.05
1.75±0.1
2.45±0.1
2.4±0.1
5.5±0.2
8.0±0.2
2.2±0.1
4.0±0.1
φ1.1±0.1
0～0.5
2.4±0.1
1.15±0.1.
Absolute maximum ratings (Ta=25C) Parameter Symbol VR Reverse voltage (DC).
Datasheet Details
Part number
RB541XN
Manufacturer
ROHM
File Size
1.25 MB
Description
Schottky Barrier Diode
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Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
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View original datasheet text
Data Sheet
Schottky Barrier Diode
RB541XN
Applications Rectify small power Dimensions (Unit : mm) Land size figure (Unit : mm)
0.65
0.25± 0.1
0.05
0.65
2.0±0.2 Each lead has same dimension (5) (4)
0.15±0.05
1.25±0.1
3)High reliability
(1) 0.65 (2) 0.65 (3)
2.1±0.1
Features 1)Small mold type. (UMD6) 2)Low VF
0.9
0～0.1
0.35
UMD6
Construction Silicon epitaxial planer
1.3±0.1
0.7 0.9±0.1
0.1Min
Structure
ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory)
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05 φ1.5±0.1 0 0.3±0.1
www.DataSheet.co.kr
3.5±0.05
1.75±0.1
2.45±0.1
2.4±0.1
5.5±0.2
8.0±0.2
2.2±0.1
4.0±0.1
φ1.1±0.1
0～0.5
2.4±0.1
1.15±0.
RB541XN Datasheet
