Datasheet Details
| Part number |
FMW6
|
| Manufacturer |
ROHM |
| File Size |
66.19 KB |
| Description |
dual transistors |
| Datasheet |
 FMW6_Rohm.pdf
|
FMW6 Product details
Features
- 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.95pF)
!Equivalent circuit
EMX4 / UMX4N
(3) (2) (1)
IMX4
(4) (5) (6)
UMW6N
(3) (2) (1)
FMW6
(3) (4) (5)
UMW10
(3) (2) (1)
FMW10
(3) (4) (5)
(4)
(5)
(6)
(3)
(2)
(1)
(4)
(5)
(2)
(1)
(4)
(5)
(2)
(1)
!Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power di.
📁 FMW6 Similar Datasheet
- FMW60N070S2HF - N-Channel power MOSFET (Fuji Electric)
- FMW60N075S2FDHF - N-Channel enhancement mode power MOSFET (Fuji Electric)
- FMW60N088S2HF - N-Channel enhancement mode power MOSFET (Fuji Electric)
- FMW60N125S2HF - N-Channel enhancement mode power MOSFET (Fuji Electric)
- FMW60N160S2HF - N-Channel enhancement mode power MOSFET (Fuji Electric)
- FMW60N190S2HF - N-Channel MOSFET (INCHANGE)
- FMW-2106 - Schottky Barrier Rectifier (Sanken electric)
- FMW-2156 - Schottky Diode (Sanken electric)
Other Datasheets by Rohm
- FMW10 - dual transistors
- FMW2 - General purpose
- FMW3 - dual transistors
- FMW4 - dual transistors
