2SD2537 - Medium Power Transistor

Datasheet Details

1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) !External dimensions (Units : mm) 2SD2537 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 0.5 (3) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 Single pulse Pw=100ms VCBO VCEO VEBO IC PC Tj Tstg 30 25 12 1.2 2 2 150.
55~+150 V V V A (DC) A (Pulse) ∗1.

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Published: Apr 3, 2005 |